STU7N65M2
MOSFET. Datasheet pdf. Equivalent
Type Designator: STU7N65M2
Marking Code: 7N65M2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 14.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.15
Ohm
Package:
IPAK
STU7N65M2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU7N65M2
Datasheet (PDF)
..1. Size:876K st
stp7n65m2 stu7n65m2.pdf 
STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche
8.1. Size:1199K st
std7n60m2 stp7n60m2 stu7n60m2.pdf
STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21
9.1. Size:596K st
std7nm60n stf7nm60n stu7nm60n.pdf
STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications
9.2. Size:882K st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf
STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V
9.3. Size:403K st
stu7nb90-i.pdf
STU7NB90STU7NB90IN-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220IPowerMesh MOSFETTYPE VDSS RDS(on) IDSTU7NB90 900 V
9.4. Size:45K st
stu7na80.pdf
STU7NA80N - CHANNEL 800V - 1.3 - 6.5A - Max220FAST POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA80 800 V
9.5. Size:995K st
std7n80k5 stp7n80k5 stu7n80k5.pdf
STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312
9.6. Size:736K st
stu7nf25.pdf
STU7NF25N-channel 250 V, 0.29 typ., 8 A STripFET II Power MOSFET in IPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max. IDTABSTU7NF25 250 V 0.42 8 A 100% avalanche tested3 175 C junction temperature21ApplicationsIPAK Switching applicationsDescriptionThis Power MOSFET has been developed using Figure 1. Internal sche
9.7. Size:45K st
stu7nb100.pdf
STU7NB100N - CHANNEL 1000V - 1.2 - 7.3A - Max220PowerMESH MOSFETPRELIMINARY DATA TYPE VDSS RDS(on) IDSTU7NB100 1000 V
9.8. Size:1031K st
stp7n105k5 stu7n105k5 stw7n105k5.pdf
STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F
9.9. Size:49K st
stu7na90.pdf
STU7NA90N - CHANNEL 900V - 1.05 - 7A - Max220FAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA90 900 V
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
