IRFR430APBF Todos los transistores

 ..1. Size:251K  international rectifier
 irfr430apbf irfu430apbf.pdf

PD -95076A SMPS MOSFET IRFR430APbF IRFU430APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 1.7 5.0A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

 ..2. Size:252K  vishay
 irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

 6.1. Size:111K  international rectifier
 irfr430a.pdf

PD - 94356A SMPS MOSFET IRFR430A IRFU430A Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 1.7 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avala

 6.2. Size:497K  samsung
 irfr430a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 6.3. Size:154K  vishay
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

 6.4. Size:252K  infineon
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

 6.5. Size:263K  inchange semiconductor
 irfr430a.pdf

isc N-Channel MOSFET Transistor IRFR430A FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose