IRFR430APBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR430APBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
TO-252
IRFR430APBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR430APBF
Datasheet (PDF)
..1. Size:251K international rectifier
irfr430apbf irfu430apbf.pdf 
PD -95076ASMPS MOSFETIRFR430APbFIRFU430APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 1.7 5.0Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance
..2. Size:252K vishay
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
6.1. Size:111K international rectifier
irfr430a.pdf
PD - 94356ASMPS MOSFETIRFR430AIRFU430AApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyVDSS RDS(on) max ID High speed power switching500V 1.7 5.0ABenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD-Pak I-PakAvala
6.2. Size:497K samsung
irfr430a.pdf
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char
6.3. Size:154K vishay
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage
6.4. Size:252K infineon
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
6.5. Size:263K inchange semiconductor
irfr430a.pdf
isc N-Channel MOSFET Transistor IRFR430AFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
, IRFP3710
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, IRFP431
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, IRFP440
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