IRFR5410PBF Todos los transistores

 

IRFR5410PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR5410PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.205 Ohm
   Paquete / Cubierta: TO-252
 

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IRFR5410PBF Datasheet (PDF)

 ..1. Size:267K  international rectifier
 irfr5410pbf irfu5410pbf.pdf pdf_icon

IRFR5410PBF

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 6.1. Size:215K  international rectifier
 irfr5410.pdf pdf_icon

IRFR5410PBF

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 6.2. Size:220K  international rectifier
 auirfr5410tr.pdf pdf_icon

IRFR5410PBF

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

 6.3. Size:318K  infineon
 auirfr5410.pdf pdf_icon

IRFR5410PBF

AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut

MOSTRAR MÁS

Otros transistores... IRFR430A , IRFR430APBF , IRFR4510PBF , IRFR4615PBF , IRFR4620PBF , IRFR48ZPBF , IRFR5305PBF , IRFR540ZPBF , 50N06 , IRFR5505GPBF , IRFR5505PBF , IRFR6215PBF , IRFR9010PBF , IRFR9014PBF , IRFR9020PBF , IRFR9024NPBF , IRFR9024PBF .

History: MTC3586BDFA6 | IPN70R1K5CE | WMP80R1K0S | KML0D6NP20EA | SSF65R650S2 | SSM9960GH | IRL3102SPBF

 

 
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