IRFR5410PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR5410PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 66 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.205 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de IRFR5410PBF MOSFET
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IRFR5410PBF datasheet
irfr5410pbf irfu5410pbf.pdf
PD -95314A IRFR5410PbF IRFU5410PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology RDS(on) = 0.205 G l Fast Switching l Fully Avalanche Rated ID = -13A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
irfr5410.pdf
PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) RDS(on) = 0.205W l Advanced Process Technology G l Fast Switching ID = -13A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
auirfr5410.pdf
AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut
Otros transistores... IRFR430A, IRFR430APBF, IRFR4510PBF, IRFR4615PBF, IRFR4620PBF, IRFR48ZPBF, IRFR5305PBF, IRFR540ZPBF, 50N06, IRFR5505GPBF, IRFR5505PBF, IRFR6215PBF, IRFR9010PBF, IRFR9014PBF, IRFR9020PBF, IRFR9024NPBF, IRFR9024PBF
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