PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut

IRFR5410TRwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol