IRFR9214PBF Todos los transistores

 

IRFR9214PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR9214PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-252

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IRFR9214PBF Datasheet (PDF)

 ..1. Size:159K  vishay
irfr9214pbf.pdf

IRFR9214PBF
IRFR9214PBF

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) AvailableRDS(on) ()VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS*Qg (Max.) (nC) 14COMPLIANT Advanced Process TechnologyQgs (nC) 3.1 Fast SwitchingQgd (nC) 6.8 Fully Avalanche RatedC

 6.1. Size:107K  international rectifier
irfr9214.pdf

IRFR9214PBF
IRFR9214PBF

PD - 9.1658AIRFR/U9214PRELIMINARYHEXFET Power MOSFET P-Channel DVDSS = -250V Surface Mount (IRFR9214) Straight Lead (IRFU9214)RDS(on) = 3.0 Advanced Process TechnologyG Fast Switching Fully Avalanche Rated ID = -2.7ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance per silico

 6.2. Size:279K  international rectifier
irfr9214 irfu9214.pdf

IRFR9214PBF
IRFR9214PBF

PD - 95375AIRFR/U9214PbFHEXFET Power MOSFETl P-Channel DVDSS = -250Vl Surface Mount (IRFR9214)l Straight Lead (IRFU9214)RDS(on) = 3.0l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche Rated ID = -2.7ASl Lead-FreeDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance pe

 6.3. Size:151K  vishay
irfr9214 irfu9214 sihfr9214 sihfu9214.pdf

IRFR9214PBF
IRFR9214PBF

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) AvailableRDS(on) ()VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS*Qg (Max.) (nC) 14COMPLIANT Advanced Process TechnologyQgs (nC) 3.1 Fast SwitchingQgd (nC) 6.8 Fully Avalanche RatedC

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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