IRFR9310PBF Todos los transistores

 

IRFR9310PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR9310PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

IRFR9310PBF Datasheet (PDF)

 ..1. Size:252K  international rectifier
 irfr9310pbf irfu9310pbf.pdf pdf_icon

IRFR9310PBF

PD - 95064AIRFR9310PbFIRFU9310PbFl P-ChannelHEXFET Power MOSFETl Surface Mount (IRFR9310)l Straight Lead (IRFU9310)DVDSS = -400Vl Advanced Process Technologyl Fast Switchingl Fully Avalanche RatedRDS(on) = 7.0Gl Lead-FreeID = -1.8ADescriptionSThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-

 6.1. Size:116K  international rectifier
 irfr9310.pdf pdf_icon

IRFR9310PBF

PD 9.1663IRFR/U9310PRELIMINARYHEXFET Power MOSFET P-ChannelD Surface Mount (IRFR9310)VDSS = -400V Straight Lead (IRFU9310) Advanced Process TechnologyRDS(on) = 7.0 Fast SwitchingG Fully Avalanche RatedID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-resistance per silicon

 6.2. Size:276K  international rectifier
 irfr9310 irfu9310.pdf pdf_icon

IRFR9310PBF

PD - 95064AIRFR9310PbFIRFU9310PbFl P-ChannelHEXFET Power MOSFETl Surface Mount (IRFR9310)l Straight Lead (IRFU9310)DVDSS = -400Vl Advanced Process Technologyl Fast Switchingl Fully Avalanche RatedRDS(on) = 7.0Gl Lead-FreeID = -1.8ADescriptionSThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-

 6.3. Size:827K  vishay
 irfr9310 irfu9310 sihfr9310 sihfu9310.pdf pdf_icon

IRFR9310PBF

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 400Available Surface Mount (IRFR9310/SiHFR9310)RDS(on) ()VGS = - 10 V 7.0RoHS* Straight Lead (IRFU9310/SiHFU9310)Qg (Max.) (nC) 13COMPLIANT Advanced Process TechnologyQgs (nC) 3.2 Fast SwitchingQgd (nC) 5.0 Fully Avalanche Rated

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MCH5908 | AFP9435WS | IRL3402S | TSM4N80CZ | PMV30XPEA | IRFS640B | JFFM13N65D

 

 
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