IRFR9310PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR9310PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: TO-252
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IRFR9310PBF Datasheet (PDF)
irfr9310pbf irfu9310pbf.pdf
PD - 95064AIRFR9310PbFIRFU9310PbFl P-ChannelHEXFET Power MOSFETl Surface Mount (IRFR9310)l Straight Lead (IRFU9310)DVDSS = -400Vl Advanced Process Technologyl Fast Switchingl Fully Avalanche RatedRDS(on) = 7.0Gl Lead-FreeID = -1.8ADescriptionSThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-
irfr9310.pdf
PD 9.1663IRFR/U9310PRELIMINARYHEXFET Power MOSFET P-ChannelD Surface Mount (IRFR9310)VDSS = -400V Straight Lead (IRFU9310) Advanced Process TechnologyRDS(on) = 7.0 Fast SwitchingG Fully Avalanche RatedID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-resistance per silicon
irfr9310 irfu9310.pdf
PD - 95064AIRFR9310PbFIRFU9310PbFl P-ChannelHEXFET Power MOSFETl Surface Mount (IRFR9310)l Straight Lead (IRFU9310)DVDSS = -400Vl Advanced Process Technologyl Fast Switchingl Fully Avalanche RatedRDS(on) = 7.0Gl Lead-FreeID = -1.8ADescriptionSThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-
irfr9310 irfu9310 sihfr9310 sihfu9310.pdf
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 400Available Surface Mount (IRFR9310/SiHFR9310)RDS(on) ()VGS = - 10 V 7.0RoHS* Straight Lead (IRFU9310/SiHFU9310)Qg (Max.) (nC) 13COMPLIANT Advanced Process TechnologyQgs (nC) 3.2 Fast SwitchingQgd (nC) 5.0 Fully Avalanche Rated
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918