IRFR9310PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR9310PBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: TO-252

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IRFR9310PBF datasheet

 ..1. Size:252K  international rectifier
 irfr9310pbf irfu9310pbf.pdf pdf_icon

IRFR9310PBF

PD - 95064A IRFR9310PbF IRFU9310PbF l P-Channel HEXFET Power MOSFET l Surface Mount (IRFR9310) l Straight Lead (IRFU9310) D VDSS = -400V l Advanced Process Technology l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0 G l Lead-Free ID = -1.8A Description S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-

 6.1. Size:116K  international rectifier
 irfr9310.pdf pdf_icon

IRFR9310PBF

PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET P-Channel D Surface Mount (IRFR9310) VDSS = -400V Straight Lead (IRFU9310) Advanced Process Technology RDS(on) = 7.0 Fast Switching G Fully Avalanche Rated ID = -1.8A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon

 6.2. Size:276K  international rectifier
 irfr9310 irfu9310.pdf pdf_icon

IRFR9310PBF

PD - 95064A IRFR9310PbF IRFU9310PbF l P-Channel HEXFET Power MOSFET l Surface Mount (IRFR9310) l Straight Lead (IRFU9310) D VDSS = -400V l Advanced Process Technology l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0 G l Lead-Free ID = -1.8A Description S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-

 6.3. Size:827K  vishay
 irfr9310 irfu9310 sihfr9310 sihfu9310.pdf pdf_icon

IRFR9310PBF

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 400 Available Surface Mount (IRFR9310/SiHFR9310) RDS(on) ( )VGS = - 10 V 7.0 RoHS* Straight Lead (IRFU9310/SiHFU9310) Qg (Max.) (nC) 13 COMPLIANT Advanced Process Technology Qgs (nC) 3.2 Fast Switching Qgd (nC) 5.0 Fully Avalanche Rated

MOSTRAR MÁS

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