IRFS31N20DPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS31N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm

Encapsulados: TO-263

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IRFS31N20DPBF datasheet

 ..1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf pdf_icon

IRFS31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 3.1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFS31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 4.1. Size:190K  international rectifier
 irfs31n20d.pdf pdf_icon

IRFS31N20DPBF

PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche

 4.2. Size:258K  inchange semiconductor
 irfs31n20d.pdf pdf_icon

IRFS31N20DPBF

Isc N-Channel MOSFET Transistor IRFS31N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IRFS250B, IRFS254, IRFS3004-7PPBF, IRFS3004PBF, IRFS3006-7PPBF, IRFS3006PBF, IRFS3107-7PPBF, IRFS3107PBF, K3569, IRFS3206PBF, IRFS3207PBF, IRFS3207ZPBF, IRFS3306PBF, IRFS3307PBF, IRFS3307ZPBF, IRFS33N15DPBF, IRFS3507PBF