IRFS4020PBF Todos los transistores

 

IRFS4020PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS4020PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 91 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO-263
 

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IRFS4020PBF Datasheet (PDF)

 ..1. Size:331K  international rectifier
irfs4020pbf irfsl4020pbf.pdf pdf_icon

IRFS4020PBF

PD - 97393IRFS4020PbFDIGITAL AUDIO MOSFETIRFSL4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsmRDS(ON) typ. @ 10V85 Low RDSON for improved efficiencyQg typ.18 nC Low QG and QSW for better THD and improved Qsw typ.6.7 nCRG(int) typ. efficiency 3.2 TJ max175 C Low QRR for better

 8.1. Size:313K  international rectifier
irfs4010-7ppbf.pdf pdf_icon

IRFS4020PBF

PD - 97343IRFS4010-7PPbFHEXFET Power MOSFETApplications DVDSS 100Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power SwitchingGmax. 4.0ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacitance and

 8.2. Size:292K  international rectifier
irfs4010pbf irfsl4010pbf.pdf pdf_icon

IRFS4020PBF

PD - 96186AIRFS4010PbFIRFSL4010PbFHEXFET Power MOSFETApplications DVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 3.9ml High Speed Power SwitchingG max. 4.7ml Hard Switched and High Frequency CircuitsID 180ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Ca

 8.3. Size:711K  infineon
auirfs4010 auirfsl4010.pdf pdf_icon

IRFS4020PBF

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

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History: FDD6N50TF | 2SJ125 | NVMFD5C650NL | IRFU420B | UM6K31N

 

 
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