IRFS4020PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS4020PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.9 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 18 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 91 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.105 Ohm
Тип корпуса: TO-263
Аналог (замена) для IRFS4020PBF
IRFS4020PBF Datasheet (PDF)
irfs4020pbf irfsl4020pbf.pdf
PD - 97393IRFS4020PbFDIGITAL AUDIO MOSFETIRFSL4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsmRDS(ON) typ. @ 10V85 Low RDSON for improved efficiencyQg typ.18 nC Low QG and QSW for better THD and improved Qsw typ.6.7 nCRG(int) typ. efficiency 3.2 TJ max175 C Low QRR for better
irfs4020pbf irfsl4020pbf.pdf
PD - 97393IRFS4020PbFDIGITAL AUDIO MOSFETIRFSL4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsmRDS(ON) typ. @ 10V85 Low RDSON for improved efficiencyQg typ.18 nC Low QG and QSW for better THD and improved Qsw typ.6.7 nCRG(int) typ. efficiency 3.2 TJ max175 C Low QRR for better
irfs4010-7ppbf.pdf
PD - 97343IRFS4010-7PPbFHEXFET Power MOSFETApplications DVDSS 100Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power SwitchingGmax. 4.0ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacitance and
irfs4010pbf irfsl4010pbf.pdf
PD - 96186AIRFS4010PbFIRFSL4010PbFHEXFET Power MOSFETApplications DVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 3.9ml High Speed Power SwitchingG max. 4.7ml Hard Switched and High Frequency CircuitsID 180ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Ca
irfs4010-7ppbf.pdf
PD - 97343IRFS4010-7PPbFHEXFET Power MOSFETApplications DVDSS 100Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power SwitchingGmax. 4.0ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacitance and
auirfs4010 auirfsl4010.pdf
AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
auirfs4010-7p.pdf
AUTOMOTIVE GRADE AUIRFS4010-7P HEXFET Power MOSFET VDSS 100V Features RDS(on) typ. 3.3m Advanced Process Technology Ultra Low On-Resistance max. 4.0m Enhanced dV/dT and dI/dT capability ID 190A 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie
irfs4010.pdf
Isc N-Channel MOSFET Transistor IRFS4010FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
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