IRFS41N15DPBF Todos los transistores

 

IRFS41N15DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS41N15DPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-263
 

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IRFS41N15DPBF Datasheet (PDF)

 ..1. Size:337K  international rectifier
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf pdf_icon

IRFS41N15DPBF

PD - 94927AIRFB41N15DPbFIRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max IDBenefits150V 0.045 41Al Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avala

 ..2. Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf pdf_icon

IRFS41N15DPBF

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 4.1. Size:193K  international rectifier
 irfs41n15d.pdf pdf_icon

IRFS41N15DPBF

PD- 93804AIRFB41N15D IRFS41N15DSMPS MOSFET IRFSL41N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.045 41ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current

 4.2. Size:257K  inchange semiconductor
 irfs41n15d.pdf pdf_icon

IRFS41N15DPBF

Isc N-Channel MOSFET Transistor IRFS41N15DFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IRFS3806PBF , IRFS38N20DPBF , IRFS4010-7PPBF , IRFS4010PBF , IRFS4020PBF , IRFS4115-7PPBF , IRFS4115PBF , IRFS4127PBF , IRF1407 , IRFS4227PBF , IRFS4228PBF , IRFS4229PBF , IRFS4310PBF , IRFS4310ZPBF , IRFS4321-7PPBF , IRFS4321PBF , STB100N10F7 .

History: QM3004N3 | STN4826

 

 
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