IRFS4228PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS4228PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 83 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 71 nC
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO-263
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IRFS4228PBF Datasheet (PDF)
irfs4228pbf irfsl4228pbf.pdf
PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco
irfs4229pbf.pdf
PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application
irfs4227pbf irfsl4227pbf.pdf
PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch
irfs4229pbf.pdf
PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application
irfs4227pbf irfsl4227pbf.pdf
PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch
irfs4229(2).pdf
Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4229.pdf
Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4227.pdf
isc N-Channel MOSFET Transistor IRFS4227, IIRFS4227FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N3824LP | ZXMN2F34FH
History: 2N3824LP | ZXMN2F34FH
Liste
Recientemente añadidas las descripciónes de los transistores:
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