IRFS4229PBF Datasheet. Equivalente

 ..1. Size:310K  international rectifier
 irfs4229pbf.pdf

PD - 97080B IRFS4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 42 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 91 A and Pass Switch Application

 6.1. Size:257K  inchange semiconductor
 irfs4229(2).pdf

Isc N-Channel MOSFET Transistor IRFS4229 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 6.2. Size:257K  inchange semiconductor
 irfs4229.pdf

Isc N-Channel MOSFET Transistor IRFS4229 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.1. Size:371K  international rectifier
 irfs4228pbf irfsl4228pbf.pdf

PD - 97231A IRFS4228PbF PDP SWITCH IRFSL4228PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Reco

 7.2. Size:357K  international rectifier
 irfs4227pbf irfsl4227pbf.pdf

PD - 96131A IRFS4227PbF PDP SWITCH IRFSL4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch

 7.3. Size:241K  inchange semiconductor
 irfs4227.pdf

isc N-Channel MOSFET Transistor IRFS4227, IIRFS4227 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate