IRFS4229PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS4229PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de IRFS4229PBF MOSFET
IRFS4229PBF Datasheet (PDF)
irfs4229pbf.pdf

PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application
irfs4229(2).pdf

Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4229.pdf

Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4228pbf irfsl4228pbf.pdf

PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco
Otros transistores... IRFS4010PBF , IRFS4020PBF , IRFS4115-7PPBF , IRFS4115PBF , IRFS4127PBF , IRFS41N15DPBF , IRFS4227PBF , IRFS4228PBF , 18N50 , IRFS4310PBF , IRFS4310ZPBF , IRFS4321-7PPBF , IRFS4321PBF , STB100N10F7 , STB100NF03L-03-1 , STB100NF03L-03T4 , STB100NF04T4 .
History: APT5010JVRU2 | SSM9987GM | GKI06109 | WML13N50C4
History: APT5010JVRU2 | SSM9987GM | GKI06109 | WML13N50C4



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