STB11NM60N-1 Todos los transistores

 ..1. Size:632K  st
 stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45

 4.1. Size:632K  st
 stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45

 4.2. Size:635K  st
 stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf

STx11NM60N N-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 10 A STD11NM60N 650 V 0.45 10 A STD11NM60N-1 650 V 0.45 10 A STF11NM60N 650 V 0.45 10 A(1) STP11NM60N 650 V 0.45

 5.1. Size:624K  st
 stb11nm60t4 stp11nm60.pdf

STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in D PAK and TO-220 packages Features VDSS TAB RDS(on) max. ID TAB Order codes Package (@ TJmax) STB11NM60T4 D PAK 3 650 V 0.45 11 A 1 3 2 STP11NM60 TO-220 D PAK TO-220 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2

 5.2. Size:388K  st
 stp11nm60a stp11nm60afp stb11nm60a-1.pdf

STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V

 5.3. Size:486K  st
 stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V

 5.4. Size:493K  st
 stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V

 5.5. Size:360K  st
 stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V

 5.6. Size:367K  st
 stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V

 5.7. Size:203K  inchange semiconductor
 stb11nm60fd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB11NM60FD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU