STB130NS04ZB-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STB130NS04ZB-1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1275 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: I2PAK

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STB130NS04ZB-1 Datasheet (PDF)

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stb130ns04zb-1.pdf

STB130NS04ZB-1Automotive-grade N-channel clamped, 7 m typ., 80 A fullyprotected Mesh overlay Power MOSFET in a I2PAK packageDatasheet - production dataFeaturesTABRDS(on) Type VDS IDmax.STB130NS04ZB-1 Clamped 9 m 80 A Designed for automotive applications and AEC-Q101 qualified321 100% avalanche tested Low capacitance and gate chargeI2PAK 1

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stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

2.1. Size:396K st
stb130ns04zbt4.pdf

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

7.1. Size:410K st
stb130nh02l.pdf

STB130NH02LN-CHANNEL 24V - 0.0034 - 120A DPAKSTripFET III POWER MOSFET FOR DC-DC CONVERSIONTYPE VDSS RDS(on) IDSTB130NH02L 24 V

8.1. Size:228K st
stb13007dt4.pdf

STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high

8.2. Size:210K st
stb13005.pdf

STB13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1)32Applications 1I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionFigur

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