All MOSFET. STB130NS04ZB-1 Datasheet

 

STB130NS04ZB-1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB130NS04ZB-1
   Marking Code: B130NS04ZB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1275 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: I2PAK

 STB130NS04ZB-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB130NS04ZB-1 Datasheet (PDF)

 ..1. Size:515K  st
stb130ns04zb-1.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STB130NS04ZB-1Automotive-grade N-channel clamped, 7 m typ., 80 A fullyprotected Mesh overlay Power MOSFET in a I2PAK packageDatasheet - production dataFeaturesTABRDS(on) Type VDS IDmax.STB130NS04ZB-1 Clamped 9 m 80 A Designed for automotive applications and AEC-Q101 qualified321 100% avalanche tested Low capacitance and gate chargeI2PAK 1

 ..2. Size:397K  st
stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

 2.1. Size:396K  st
stb130ns04zbt4.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

 7.1. Size:410K  st
stb130nh02l.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STB130NH02LN-CHANNEL 24V - 0.0034 - 120A DPAKSTripFET III POWER MOSFET FOR DC-DC CONVERSIONTYPE VDSS RDS(on) IDSTB130NH02L 24 V

 8.1. Size:228K  st
stb13007dt4.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high

 8.2. Size:210K  st
stb13005.pdf

STB130NS04ZB-1
STB130NS04ZB-1

STB13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1)32Applications 1I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionFigur

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SML30B40

 

 
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