STB16PF06LT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STB16PF06LT4
   Código: B16PF06L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 16 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 11.4 nC
   Tiempo de subida (tr): 90 nS
   Conductancia de drenaje-sustrato (Cd): 121 pF
   Resistencia entre drenaje y fuente RDS(on): 0.125 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET STB16PF06LT4

STB16PF06LT4 Datasheet (PDF)

..1. Size:307K st
stb16pf06lt4.pdf

STB16PF06LP-CHANNEL 60V - 0.11 - 16A D2PAKSTripFET MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTB16PF06L 60 V

4.1. Size:324K st
stb16pf06l.pdf

STB16PF06LP-CHANNEL 60V - 0.11 - 16A D2PAKSTripFET MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTB16PF06L 60 V

9.1. Size:294K st
stb16nk65z-s stp16nk65z.pdf

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

9.2. Size:577K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

9.3. Size:469K st
stb16ns25.pdf

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

9.4. Size:399K st
stb16nf06lt4.pdf

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

9.5. Size:54K st
stb16nb25.pdf

STB16NB25N - CHANNEL 250V - 0.220 - 16 A - TO-263PowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB16NB25 250 V

9.6. Size:348K st
stb16ns25t4.pdf

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

9.7. Size:574K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

9.8. Size:289K st
stb160nf02l.pdf

STB160NF02LN-CHANNEL 20V - 0.0018 - 160A D2PAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB160NF02L 20 V

9.9. Size:419K st
stb160nf3llt4.pdf

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

9.10. Size:338K st
stp16nk65z stb16nk65z-s.pdf

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

9.11. Size:408K st
stb16nf06l.pdf

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

9.12. Size:421K st
stb160nf3ll.pdf

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

9.13. Size:431K st
stb160nf03l.pdf

STB160NF03LN-CHANNEL 30V - 0.0021 - 160A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB160NF03L 30 V

9.14. Size:1032K st
stb16n65m5 std16n65m5.pdf

STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V

9.15. Size:115K st
stb16ne06.pdf

STB60NE06-16N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE V R IDSS DS(on) DSTB60NE06-1 60 V

9.16. Size:394K st
stb160n75f3 stp160n75f3 stw160n75f3.pdf

STB160N75F3STP160N75F3 - STW160N75F3N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PAKSTripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max.)3STB160N75F3 75V 3.7 m120 A(1) 32211STP160N75F3 75V 4 m TO-220120 A(1)TO-247STW160N75F3 75V 4 m120 A(1)1. Current limited by package31 Ultra low on-resistanceDPAK 100% Avalanche tes

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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