STB40NF10LT4 Todos los transistores

 

STB40NF10LT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STB40NF10LT4

Código: B40NF10L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 46 nC

Tiempo de elevación (tr): 82 nS

Conductancia de drenaje-sustrato (Cd): 290 pF

Resistencia drenaje-fuente RDS(on): 0.033 Ohm

Empaquetado / Estuche: D2PAK

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STB40NF10LT4 Datasheet (PDF)

1.1. stb40nf10t4.pdf Size:403K _upd

STB40NF10LT4
STB40NF10LT4

STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10 100V <0.028Ω 50A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ 100% avalanche tested 1 ■ Application oriented characterization D2PAK Description This Power MOSFET is the latest development of STMicroelectronis un

1.2. stb40nf10lt4.pdf Size:393K _upd

STB40NF10LT4
STB40NF10LT4

STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10L 100V <0.033Ω 40A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 ■ Application oriented characterization 1 D2PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specific

 1.3. stb40nf10t4.pdf Size:403K _st

STB40NF10LT4
STB40NF10LT4

STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10 100V <0.028Ω 50A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ 100% avalanche tested 1 ■ Application oriented characterization D2PAK Description This Power MOSFET is the latest development of STMicroelectronis un

1.4. stb40nf10l.pdf Size:400K _st

STB40NF10LT4
STB40NF10LT4

STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10L 100V <0.033Ω 40A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 ■ Application oriented characterization 1 D2PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specific

 1.5. stb40nf10.pdf Size:414K _st

STB40NF10LT4
STB40NF10LT4

STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10 100V <0.028Ω 50A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ 100% avalanche tested 1 ■ Application oriented characterization D2PAK Description This Power MOSFET is the latest development of STMicroelectronis un

1.6. stb40nf10lt4.pdf Size:393K _st

STB40NF10LT4
STB40NF10LT4

STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10L 100V <0.033Ω 40A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 ■ Application oriented characterization 1 D2PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specific

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , BUZ90A , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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