STB80PF55T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB80PF55T4
Código: B80PF55
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 190 nC
trⓘ - Tiempo de subida: 190 nS
Cossⓘ - Capacitancia de salida: 1130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET STB80PF55T4
STB80PF55T4 Datasheet (PDF)
stb80pf55t4.pdf
STB80PF55STP80PF55P-channel 55V - 0.016 - 80A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP80PF55 55V
stb80pf55 stp80pf55.pdf
STB80PF55STP80PF55P-channel 55 V, 0.016 , 80 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP80PF55 55V
stb80pf55.pdf
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stb80nf55l-06 stp80nf55l-06.pdf
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stb80nf10 stp80nf10.pdf
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stb80nf75l stp80nf75l.pdf
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stb80nf06.pdf
STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V
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stb80nf55l-08.pdf
STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf
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stb80nf03l-04t4.pdf
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stb80ne03l.pdf
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stb80nf55-06t.pdf
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stb80nf55l.pdf
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stp80nf06 stb80nf06 stw80nf06.pdf
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stb80nf55-08-1.pdf
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stb80ne06-10.pdf
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stb80nf55-06.pdf
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stb80nf12.pdf
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stb80nf10t4.pdf
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stb80ne03l-06.pdf
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stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf
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stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf
STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC
stb80nf03l-04-1.pdf
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stb80l60 stp80l60.pdf
GreenProductSTB/P80L60aS mHop Microelectronics C orp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.60V 80A 8.0 @ VGS=10VTO-220 & TO-263 package.DGSTP SERIESSTB SERIESTO-220TO-263(DD-P AK)S
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Liste
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