STB80PF55T4 - параметры транзистора MOSFET, его аналоги, datasheet

STB80PF55T4 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: STB80PF55T4
   Маркировка: B80PF55
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 190 nC
   tr ⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 1130 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: D2PAK

Аналог (замена) для STB80PF55T4

- подбор ⓘ MOSFET транзистора по параметрам

STB80PF55T4 Datasheet (PDF)

..1. Size:249K st
stb80pf55t4.pdf pdf_icon

STB80PF55STP80PF55P-channel 55V - 0.016 - 80A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP80PF55 55V

5.1. Size:342K st
stb80pf55 stp80pf55.pdf pdf_icon

STB80PF55STP80PF55P-channel 55 V, 0.016 , 80 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP80PF55 55V

5.2. Size:175K st
stb80pf55.pdf pdf_icon

STB80PF55P-CHANNEL 55V - 0.016 - 80A D2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB80PF55 55 V

9.1. Size:447K st
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

9.2. Size:399K st
stb80nf55l-06 stp80nf55l-06.pdf pdf_icon

STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

9.3. Size:579K st
stb80nf10 stp80nf10.pdf pdf_icon

STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V

9.4. Size:377K st
stb80nf75l stp80nf75l.pdf pdf_icon

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

9.5. Size:301K st
stb80nf06.pdf pdf_icon

STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V

9.6. Size:431K st
stb80ne03l-06t4.pdf pdf_icon

STB80NE03L-06N-channel 30V - 0.005 - 85A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NE03L-06 30V

9.7. Size:195K st
stb80nf55l-08.pdf pdf_icon

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC

9.8. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

9.9. Size:321K st
stb80nf03l-04t4.pdf pdf_icon

STB80NF03L-04T4N-channel 30 V, 0.0035 , 80 A D2PAKSTripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTB80NF03L-04T4 30 V

9.10. Size:84K st
stb80ne03l.pdf pdf_icon

STB80NE03L-06 N - CHANNEL 30V - 0.005 - 80A - D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(o n) IDSTB80NE03L-06 30 V

9.11. Size:680K st
stb80nf55-06t.pdf pdf_icon

STB80NF55-06TN-channel 55 V, 5 m, 80 A STripFET II Power MOSFETin a DPAK packageFeaturesOrder code VDSS RDS(on) max. IDSTB80NF55-06T 55 V

9.12. Size:395K st
stb80nf55l.pdf pdf_icon

STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

9.13. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf pdf_icon

STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V

9.14. Size:255K st
stb80nf55-08-1.pdf pdf_icon

STP80NF55-08STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTable 1: General Features Figure 1:PackageTYPE VDSS RDS(on) IDSTB80NF55-08/-1 55 V

9.15. Size:241K st
stb80ne06-10.pdf pdf_icon

STB80NE06-10N-CHANNEL 60V - 0.085 - 80A DPAK"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTB80NE06-10 60 V

9.16. Size:482K st
stb80nf55-06.pdf pdf_icon

STB80NF55-06STP80NF55-06 STP80NF55-06FPN-CHANNEL 55V - 0.005 - 80A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55-06 55 V

9.17. Size:932K st
stb80n20m5 stp80n20m5.pdf pdf_icon

STB80N20M5STP80N20M5N-channel 200 V, 0.019 , 61 A, TO-220, D2PAKMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDTJmax maxSTB80N20M5 61 A200 V

9.18. Size:501K st
stb80nf12.pdf pdf_icon

STB80NF12 STW80NF12STP80NF12 STP80NF12FPN-CHANNEL 120V-0.013-80A TO-220/TO-247/TO-220FP/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDTO-220 TO-220FPSTB80NF12 120 V

9.19. Size:577K st
stb80nf10t4.pdf pdf_icon

STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V

9.20. Size:436K st
stb80ne03l-06.pdf pdf_icon

STB80NE03L-06N-channel 30V - 0.005 - 85A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NE03L-06 30V

9.21. Size:437K st
stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

9.22. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf pdf_icon

9.23. Size:242K st
stb80nf03l-04-1.pdf pdf_icon

STB80NF03L-04N-channel 30 V, 0.0035 , 80 A, I2PAKSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF03L-04 30V

9.24. Size:176K samhop
stb80l60 stp80l60.pdf pdf_icon

GreenProductSTB/P80L60aS mHop Microelectronics C orp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.60V 80A 8.0 @ VGS=10VTO-220 & TO-263 package.DGSTP SERIESSTB SERIESTO-220TO-263(DD-P AK)S

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