IRFS59N10DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95378IRFB59N10DPbF IRFS59N10DPbFSMPS MOSFET IRFSL59N10DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl UPS / Motor Control Inverters 100V 0.025 59Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1

PD - 95378IRFB59N10DPbF IRFS59N10DPbFSMPS MOSFET IRFSL59N10DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl UPS / Motor Control Inverters 100V 0.025 59Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1

PD - 93890IRFB59N10D IRFS59N10DSMPS MOSFET IRFSL59N10DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 100V 0.025 59ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalanc

Isc N-Channel MOSFET Transistor IRFS59N10DFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

IRFS510AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-220F 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. So

PD - 96204DIGITAL AUDIO MOSFET IRFS5615PbFIRFSL5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m34.5 Low RDSON for Improved EfficiencyQg typ.26 nC Low QG and QSW for Better THD and Improved Qsw typ.11 nCRG(int) typ. Efficiency 2.7 TJ max175 C Low QRR for Better THD

PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign

PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign

PD - 94357IRFB52N15D IRFS52N15DSMPS MOSFET IRFSL52N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current

PD - 96205DIGITAL AUDIO MOSFETIRFS5620PbFFeatures IRFSL5620PbF Key Parameters Optimized for Class-D AudioKey Parameters Amplifier ApplicationsVDS200 V Low RDSON for Improved EfficiencyRDS(ON) typ. @ 10V m63.7 Low QG and QSW for Better THD and ImprovedQg typ.25 nC EfficiencyQsw typ.9.8 nC Low QRR for Better THD and Lower EMI RG(int) typ. 2.6

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10.7 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 21 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

Isc N-Channel MOSFET Transistor IRFS5615FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor IRFS52N15D, IIRFS52N15DFEATURESStatic drain-source on-resistance:RDS(on)32mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta