IRFS59N10DPBF - описание и поиск аналогов

PD - 95378 IRFB59N10DPbF IRFS59N10DPbF SMPS MOSFET IRFSL59N10DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l UPS / Motor Control Inverters 100V 0.025 59A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1

PD - 95378 IRFB59N10DPbF IRFS59N10DPbF SMPS MOSFET IRFSL59N10DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l UPS / Motor Control Inverters 100V 0.025 59A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1

PD - 93890 IRFB59N10D IRFS59N10D SMPS MOSFET IRFSL59N10D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.025 59A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanc

Isc N-Channel MOSFET Transistor IRFS59N10D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

IRFS510A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220F 175 C Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. So

PD - 96204 DIGITAL AUDIO MOSFET IRFS5615PbF IRFSL5615PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 150 V Amplifier Applications RDS(ON) typ. @ 10V m 34.5 Low RDSON for Improved Efficiency Qg typ. 26 nC Low QG and QSW for Better THD and Improved Qsw typ. 11 nC RG(int) typ. Efficiency 2.7 TJ max 175 C Low QRR for Better THD

PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 150 V VDS (Avalanche) min. 200 V Benefits RDS(ON) max @ 10V 32 m l Low Gate-to-Drain Charge to TJ max Reduce Switching Losses 175 C l Fully Characterized Capacitance Including Effective COSS to Simplify Design

PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 150 V VDS (Avalanche) min. 200 V Benefits RDS(ON) max @ 10V 32 m l Low Gate-to-Drain Charge to TJ max Reduce Switching Losses 175 C l Fully Characterized Capacitance Including Effective COSS to Simplify Design

PD - 94357 IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF Features IRFSL5620PbF Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS 200 V Low RDSON for Improved Efficiency RDS(ON) typ. @ 10V m 63.7 Low QG and QSW for Better THD and Improved Qg typ. 25 nC Efficiency Qsw typ. 9.8 nC Low QRR for Better THD and Lower EMI RG(int) typ. 2.6

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10.7 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxim

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

Isc N-Channel MOSFET Transistor IRFS5615 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

isc N-Channel MOSFET Transistor IRFS52N15D, IIRFS52N15D FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta