IRFS614B Todos los transistores

 ..1. Size:853K  fairchild semi
 irfs614b.pdf

November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to

 7.1. Size:213K  1
 irfs614a.pdf

 8.1. Size:261K  1
 irfs610a.pdf

IRFS610A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

 9.1. Size:277K  1
 irfs634.pdf

 9.2. Size:211K  1
 irfs620a.pdf

 9.3. Size:309K  1
 irfs644 irfs645.pdf

 9.4. Size:301K  1
 irfs640 irfs641.pdf

 9.5. Size:875K  1
 irfs624b irf624b.pdf

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to

 9.6. Size:281K  1
 irfs620 irfs621.pdf

 9.7. Size:261K  1
 irfs650a.pdf

IRFS650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sym

 9.8. Size:285K  1
 irfs624.pdf

 9.9. Size:881K  1
 irf620b irfs620b.pdf

 9.10. Size:284K  1
 irfs630 irfs631.pdf

 9.11. Size:296K  1
 irfs634 irfs635.pdf

 9.12. Size:276K  1
 irfs644.pdf

 9.13. Size:301K  1
 irfs624 irfs625.pdf

 9.14. Size:859K  1
 irf630b irfs630b.pdf

IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switchin

 9.15. Size:266K  international rectifier
 auirfs6535 auirfsl6535.pdf

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET Power MOSFET Advanced Process Technology D Low On-Resistance V(BR)DSS 300V 175 C Operating Temperature RDS(on) typ. 148m Fast Switching G max. 185m Repetitive Avalanche Allowed up to Tjmax S ID 19A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically designed

 9.16. Size:868K  fairchild semi
 irfs654b.pdf

 9.17. Size:858K  fairchild semi
 irfs634b.pdf

 9.18. Size:874K  fairchild semi
 irf624b irfs624b.pdf

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to

 9.19. Size:916K  fairchild semi
 irf640b irfs640b.pdf

 9.20. Size:898K  fairchild semi
 irfs644b.pdf

 9.21. Size:900K  fairchild semi
 irf644b irfs644b.pdf

 9.22. Size:859K  fairchild semi
 irf634b irfs634b.pdf

 9.23. Size:922K  fairchild semi
 irfs640b.pdf

 9.24. Size:508K  samsung
 irfs630a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.333 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.25. Size:504K  samsung
 irfs644a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 9.26. Size:505K  samsung
 irfs634a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 9.27. Size:511K  samsung
 irfs624a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.28. Size:508K  samsung
 irfs640a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

 9.29. Size:28K  samsung
 irfszxx irfs5xx irfs6xx irfs7xx.pdf

 9.30. Size:515K  samsung
 irfs654a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 12 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.31. Size:701K  infineon
 auirfs6535 auirfsl6535.pdf

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 HEXFET Power MOSFET Features Advanced Process Technology VDSS 300V Low On-Resistance RDS(on) typ. 148m 175 C Operating Temperature Fast Switching max. 185m Repetitive Avalanche Allowed up to Tjmax ID 19A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specific