IRFS614B - параметры транзистора MOSFET, его аналоги, datasheet

IRFS614B Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFS614B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 22 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.1 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO-220F

Аналог (замена) для IRFS614B

- подбор MOSFET транзистора по параметрам

IRFS614B Datasheet (PDF)

..1. Size:853K fairchild semi
irfs614b.pdf pdf_icon

November 2001IRF614B/IRFS614B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to

7.1. Size:213K 1
irfs614a.pdf pdf_icon

8.1. Size:261K 1
irfs610a.pdf pdf_icon

IRFS610AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

9.1. Size:277K 1
irfs634.pdf pdf_icon

9.2. Size:211K 1
irfs620a.pdf pdf_icon

9.3. Size:309K 1
irfs644 irfs645.pdf pdf_icon

9.4. Size:301K 1
irfs640 irfs641.pdf pdf_icon

9.5. Size:875K 1
irfs624b irf624b.pdf pdf_icon

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

9.6. Size:281K 1
irfs620 irfs621.pdf pdf_icon

9.7. Size:261K 1
irfs650a.pdf pdf_icon

IRFS650AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15.8 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSym

9.8. Size:285K 1
irfs624.pdf pdf_icon

9.9. Size:881K 1
irf620b irfs620b.pdf pdf_icon

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

9.10. Size:284K 1
irfs630 irfs631.pdf pdf_icon

9.11. Size:296K 1
irfs634 irfs635.pdf pdf_icon

9.12. Size:276K 1
irfs644.pdf pdf_icon

9.13. Size:301K 1
irfs624 irfs625.pdf pdf_icon

9.14. Size:859K 1
irf630b irfs630b.pdf pdf_icon

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

9.15. Size:266K international rectifier
auirfs6535 auirfsl6535.pdf pdf_icon

AUTOMOTIVE GRADEAUIRFS6535AUIRFSL6535FeaturesHEXFET Power MOSFET Advanced Process TechnologyD Low On-ResistanceV(BR)DSS 300V 175C Operating TemperatureRDS(on) typ. 148m Fast SwitchingGmax. 185m Repetitive Avalanche Allowed up to TjmaxSID 19A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically designed

9.16. Size:868K fairchild semi
irfs654b.pdf pdf_icon

November 2001IRF654B/IRFS654B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

9.17. Size:858K fairchild semi
irfs634b.pdf pdf_icon

November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

9.18. Size:874K fairchild semi
irf624b irfs624b.pdf pdf_icon

9.19. Size:916K fairchild semi
irf640b irfs640b.pdf pdf_icon

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

9.20. Size:898K fairchild semi
irfs644b.pdf pdf_icon

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

9.21. Size:900K fairchild semi
irf644b irfs644b.pdf pdf_icon

9.22. Size:859K fairchild semi
irf634b irfs634b.pdf pdf_icon

9.23. Size:922K fairchild semi
irfs640b.pdf pdf_icon

9.24. Size:508K samsung
irfs630a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.25. Size:504K samsung
irfs644a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.26. Size:505K samsung
irfs634a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.27. Size:511K samsung
irfs624a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.28. Size:508K samsung
irfs640a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.29. Size:28K samsung
irfszxx irfs5xx irfs6xx irfs7xx.pdf pdf_icon

9.30. Size:515K samsung
irfs654a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 12 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.31. Size:701K infineon
auirfs6535 auirfsl6535.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 HEXFET Power MOSFET Features Advanced Process Technology VDSS 300V Low On-Resistance RDS(on) typ. 148m 175C Operating Temperature Fast Switching max. 185m Repetitive Avalanche Allowed up to Tjmax ID 19A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specific

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .