IRFS9N60APBF Todos los transistores

 ..1. Size:232K  international rectifier
 irfs9n60apbf.pdf

PD - 95538 SMPS MOSFET IRFS9N60APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 9.2A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S l Fully Characterized Capacitance an

 5.1. Size:270K  international rectifier
 irfs9n60a.pdf

PD - 95538 SMPS MOSFET IRFS9N60APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 9.2A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S l Fully Characterized Capacitance an

 5.2. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf

IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 requirement RDS(on) ( )VGS = 10 V 0.75 Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Available Fully characterized capacitance and avalanche Qgd (nC) 20 voltage and curr

 5.3. Size:278K  inchange semiconductor
 irfs9n60a.pdf

iscN-Channel MOSFET Transistor IRFS9N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU