IRFSL3806PBF Todos los transistores

 ..1. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C

 7.1. Size:715K  international rectifier
 irfsl38n20dpbf.pdf

PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF SMPS MOSFET IRFSL38N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 200 V l Lead-Free VDS (Avalanche) min. 260 V RDS(ON) max @ 10V m 54 Benefits TJ max 175 C l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Inc

 7.2. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 7.3. Size:256K  inchange semiconductor
 irfsl38n20d.pdf

Isc N-Channel MOSFET Transistor IRFS38N20D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 2