IRFSL3806PBF - Даташиты. Аналоги. Основные параметры

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

PD - 97001APROVISIONALIRFB38N20DPbF IRFS38N20DPbFSMPS MOSFET IRFSL38N20DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC converters Key Parametersl Plasma Display PanelVDS200 Vl Lead-FreeVDS (Avalanche) min.260 VRDS(ON) max @ 10V m54BenefitsTJ max175 Cl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Inc

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

Isc N-Channel MOSFET Transistor IRFS38N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 2