IRFSL4127PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL4127PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 72 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 100 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 410 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de MOSFET IRFSL4127PBF
IRFSL4127PBF Datasheet (PDF)
irfs4127pbf irfsl4127pbf.pdf
PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa
irfs4127pbf irfsl4127pbf.pdf
PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa
irfsl4127.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFSL4127FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
irfs4115pbf irfsl4115pbf.pdf
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
auirfsl4115.pdf
AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri
irfs4115pbf irfsl4115pbf.pdf
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
auirfs4115 auirfsl4115.pdf
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
irfsl41n15d.pdf
Isc N-Channel MOSFET Transistor IRFS41N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1
irfsl4115.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4115FEATURESWith TO-262 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
