Справочник MOSFET. IRFSL4127PBF

 

IRFSL4127PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFSL4127PBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 375 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 72 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 100 nC
   Время нарастания (tr): 18 ns
   Выходная емкость (Cd): 410 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRFSL4127PBF

 

 

IRFSL4127PBF Datasheet (PDF)

 ..1. Size:355K  international rectifier
irfs4127pbf irfsl4127pbf.pdf

IRFSL4127PBF
IRFSL4127PBF

PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa

 ..2. Size:355K  infineon
irfs4127pbf irfsl4127pbf.pdf

IRFSL4127PBF
IRFSL4127PBF

PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa

 5.1. Size:188K  inchange semiconductor
irfsl4127.pdf

IRFSL4127PBF
IRFSL4127PBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFSL4127FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 7.1. Size:286K  international rectifier
irfs4115pbf irfsl4115pbf.pdf

IRFSL4127PBF
IRFSL4127PBF

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

 7.2. Size:285K  international rectifier
auirfsl4115.pdf

IRFSL4127PBF
IRFSL4127PBF

AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A

 7.3. Size:708K  infineon
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf

IRFSL4127PBF
IRFSL4127PBF

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 7.4. Size:286K  infineon
irfs4115pbf irfsl4115pbf.pdf

IRFSL4127PBF
IRFSL4127PBF

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

 7.5. Size:722K  infineon
auirfs4115 auirfsl4115.pdf

IRFSL4127PBF
IRFSL4127PBF

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 7.6. Size:255K  inchange semiconductor
irfsl41n15d.pdf

IRFSL4127PBF
IRFSL4127PBF

Isc N-Channel MOSFET Transistor IRFS41N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

 7.7. Size:246K  inchange semiconductor
irfsl4115.pdf

IRFSL4127PBF
IRFSL4127PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4115FEATURESWith TO-262 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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