IRFSL4620PBF Todos los transistores

 ..1. Size:359K  international rectifier
 irfs4620pbf irfsl4620pbf.pdf

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

 5.1. Size:224K  inchange semiconductor
 irfsl4620.pdf

Isc N-Channel MOSFET Transistor IRFSL4620 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 7.1. Size:365K  international rectifier
 irfs4615pbf irfsl4615pbf.pdf

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

 7.2. Size:399K  international rectifier
 irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 7.3. Size:381K  international rectifier
 irfb4610 irfs4610 irfsl4610.pdf

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita

 7.4. Size:286K  inchange semiconductor
 irfsl4610.pdf

isc N-Channel MOSFET Transistor IRFSL4610 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 7.5. Size:255K  inchange semiconductor
 irfsl4615.pdf

Isc N-Channel MOSFET Transistor IRFS4615 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150