IRFSL4620PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL4620PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 144
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 22.4
nS
Cossⓘ -
Output Capacitance: 125
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0775
Ohm
Package:
TO-262
IRFSL4620PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL4620PBF
Datasheet (PDF)
..1. Size:359K international rectifier
irfs4620pbf irfsl4620pbf.pdf
PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap
..2. Size:359K infineon
irfs4620pbf irfsl4620pbf.pdf
PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap
5.1. Size:224K inchange semiconductor
irfsl4620.pdf
Isc N-Channel MOSFET Transistor IRFSL4620FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
7.1. Size:365K international rectifier
irfs4615pbf irfsl4615pbf.pdf
PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac
7.2. Size:399K international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf
PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
7.3. Size:365K infineon
irfs4615pbf irfsl4615pbf.pdf
PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac
7.4. Size:399K infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf
PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
7.5. Size:381K infineon
irfb4610 irfs4610 irfsl4610.pdf
PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita
7.6. Size:286K inchange semiconductor
irfsl4610.pdf
isc N-Channel MOSFET Transistor IRFSL4610FEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
7.7. Size:255K inchange semiconductor
irfsl4615.pdf
Isc N-Channel MOSFET Transistor IRFS4615FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150
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