IRFU3518PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU3518PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: TO-251
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IRFU3518PBF Datasheet (PDF)
irfr3518pbf irfu3518pbf.pdf

PD - 95510AIRFR3518PbF IRFU3518PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl Lead-Free 80V 29mW 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current
irfu3518.pdf

isc N-Channel MOSFET Transistor IRFU3518FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irfr3505pbf irfu3505pbf.pdf

PD - 95511BIRFR3505PbFIRFU3505PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013G Lead-FreeID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resis
irfr3504zpbf irfu3504zpbf.pdf

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
Otros transistores... IRFU2607ZPBF , IRFU2905ZPBF , IRFU310PBF , IRFU320PBF , IRFU3410PBF , IRFU3412PBF , IRFU3418PBF , IRFU3505PBF , IRF2807 , IRFU3607PBF , IRFU3704 , IRFU3704PBF , IRFU3704ZPBF , IRFU3706 , IRFU3706PBF , IRFU3707 , IRFU3707ZPBF .
History: HTD2K4P15T | NTJS4405NT1 | NCE85H21C | AOB409L | SHD225628 | HM1607D
History: HTD2K4P15T | NTJS4405NT1 | NCE85H21C | AOB409L | SHD225628 | HM1607D



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