IRFU4105PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFU4105PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-251

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IRFU4105PBF Datasheet (PDF)

..1. Size:239K international rectifier
irfr4105pbf irfu4105pbf.pdf

PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r

..2. Size:239K infineon
irfr4105pbf irfu4105pbf.pdf

6.1. Size:330K international rectifier
irfr4105zpbf irfu4105zpbf.pdf

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

6.2. Size:330K infineon
irfr4105zpbf irfu4105zpbf.pdf

6.3. Size:720K infineon
auirfr4105z auirfu4105z.pdf

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

6.4. Size:246K inchange semiconductor
irfu4105.pdf

isc N-Channel MOSFET Transistor IRFU4105FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Volt

6.5. Size:261K inchange semiconductor
irfu4105z.pdf

isc N-Channel MOSFET Transistor IRFU4105ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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