IRFU4105PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFU4105PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 49 ns
Cossⓘ - Выходная емкость: 240 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO-251
Аналог (замена) для IRFU4105PBF
IRFU4105PBF Datasheet (PDF)
irfr4105pbf irfu4105pbf.pdf
PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r
irfr4105pbf irfu4105pbf.pdf
PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r
irfr4105zpbf irfu4105zpbf.pdf
PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
irfr4105zpbf irfu4105zpbf.pdf
PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
auirfr4105z auirfu4105z.pdf
AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed
irfu4105.pdf
isc N-Channel MOSFET Transistor IRFU4105FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Volt
irfu4105z.pdf
isc N-Channel MOSFET Transistor IRFU4105ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
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Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918