IRFU430APBF Todos los transistores

 

IRFU430APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU430APBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

IRFU430APBF Datasheet (PDF)

 ..1. Size:251K  international rectifier
irfr430apbf irfu430apbf.pdf pdf_icon

IRFU430APBF

PD -95076ASMPS MOSFETIRFR430APbFIRFU430APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 1.7 5.0Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

 ..2. Size:252K  vishay
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf pdf_icon

IRFU430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current

 5.1. Size:879K  cn vbsemi
irfu430ap.pdf pdf_icon

IRFU430APBF

IRFU430APwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Complia

 6.1. Size:154K  vishay
irfr430a irfu430a sihfr430a sihfu430a.pdf pdf_icon

IRFU430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQB3N90TM | SSF11NS70UF | SPB80N06S2-09 | SI4368DY | 2SK4092 | AP13N50I-HF | SWK15N04V

 

 
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