Справочник MOSFET. IRFU430APBF

 

IRFU430APBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFU430APBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для IRFU430APBF

 

 

IRFU430APBF Datasheet (PDF)

 ..1. Size:251K  international rectifier
 irfr430apbf irfu430apbf.pdf

IRFU430APBF IRFU430APBF

PD -95076ASMPS MOSFETIRFR430APbFIRFU430APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 1.7 5.0Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

 ..2. Size:252K  vishay
 irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf

IRFU430APBF IRFU430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current

 5.1. Size:879K  cn vbsemi
 irfu430ap.pdf

IRFU430APBF IRFU430APBF

IRFU430APwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Complia

 6.1. Size:154K  vishay
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFU430APBF IRFU430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

 6.2. Size:252K  infineon
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFU430APBF IRFU430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current

 6.3. Size:272K  inchange semiconductor
 irfu430a.pdf

IRFU430APBF IRFU430APBF

isc N-Channel MOSFET Transistor IRFU430AFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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