STC4567 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STC4567
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 3.1 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SOP-8

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STC4567 Datasheet (PDF)

..1. Size:629K stansontech
stc4567.pdf

STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su

9.1. Size:409K semtron
stc4545.pdf

STC4545 30V N & P Pair Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m(typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m(typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe

9.2. Size:934K stansontech
stc4516.pdf

STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8P Channel Top View -30V/-7.2A

9.3. Size:448K stansontech
stc4539.pdf

STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

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