STC4567 Datasheet. Specs and Replacement

Type Designator: STC4567  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.1 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOP-8

  📄📄 Copy 

STC4567 substitution

- MOSFET ⓘ Cross-Reference Search

 

STC4567 datasheet

 ..1. Size:629K  stansontech
 stc4567.pdf pdf_icon

STC4567

STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su... See More ⇒

 9.1. Size:409K  semtron
 stc4545.pdf pdf_icon

STC4567

STC4545 30V N & P Pair Enhancement Mode MOSFET DESCRIPTION FEATURE The STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m (typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m (typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe... See More ⇒

 9.2. Size:934K  stansontech
 stc4516.pdf pdf_icon

STC4567

STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8 P Channel Top View -30V/-7.2A... See More ⇒

 9.3. Size:448K  stansontech
 stc4539.pdf pdf_icon

STC4567

STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application ... See More ⇒

SHOW MORE

Detailed specifications: IRFU4510PBF, IRFU4615PBF, IRFU4620PBF, IRFU48ZPBF, IRFU5305PBF, STC4516, STC4539, STC4545, 20N60, STC4606, STC4614, STC6332, STC6602, STC6614, STD100N03LT4, STD100N10F7, STD100NH02LT4

Keywords - STC4567 MOSFET specs

 STC4567 cross reference

 STC4567 equivalent finder

 STC4567 pdf lookup

 STC4567 substitution

 STC4567 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.