STC4567
MOSFET. Datasheet pdf. Equivalent
Type Designator: STC4567
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 3.1
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
SOP-8
STC4567
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STC4567
Datasheet (PDF)
..1. Size:629K stansontech
stc4567.pdf
STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su
9.1. Size:409K semtron
stc4545.pdf
STC4545 30V N & P Pair Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m(typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m(typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe
9.2. Size:934K stansontech
stc4516.pdf
STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8P Channel Top View -30V/-7.2A
9.3. Size:448K stansontech
stc4539.pdf
STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application
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