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STC6614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STC6614
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOP-8
 

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STC6614 Datasheet (PDF)

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STC6614

STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

 9.1. Size:867K  stansontech
 stc6602.pdf pdf_icon

STC6614

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8ADESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not

Otros transistores... STC4516 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , IRFZ44 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 , STD10NF10-1 , STD10NF10T4 .

History: AON6792 | DH045N04I | CSD17577Q3A | NCEP40T13AGU | VS3622DE | SPN10T10 | BRCS400P03YA

 

 
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