STC6614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STC6614
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOP-8
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STC6614 Datasheet (PDF)
stc6614.pdf

STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application
stc6602.pdf

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8ADESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not
Otros transistores... STC4516 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , IRF640 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 , STD10NF10-1 , STD10NF10T4 .
History: JMSH1003TF | PZP003BYB | JMSH1003TE | BUK637-500B | NTF3055L175T1G | JMSH1018PE | AOB2140L
History: JMSH1003TF | PZP003BYB | JMSH1003TE | BUK637-500B | NTF3055L175T1G | JMSH1018PE | AOB2140L



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