STC6614 Todos los transistores

 

STC6614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STC6614

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.3 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 47.7 nC

Tiempo de elevación (tr): 9 nS

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: SOP-8

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STC6614 Datasheet (PDF)

1.1. stc6614.pdf Size:1175K _upd

STC6614
STC6614

 STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

5.1. stc6602.pdf Size:867K _upd

STC6614
STC6614

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not

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