All MOSFET. STC6614 Datasheet

 

STC6614 Datasheet and Replacement


   Type Designator: STC6614
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
 

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STC6614 Datasheet (PDF)

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STC6614

STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

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STC6614

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8ADESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not

Datasheet: STC4516 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , IRFZ44 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 , STD10NF10-1 , STD10NF10T4 .

History: SLC500MM15SHN2 | LN2324DT2AG | IRFI3306G | AP20T15GM | JMSH1004BG | SW1N60A | AP60WN4K9K

Keywords - STC6614 MOSFET datasheet

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