STD10NF10T4 Todos los transistores

STD10NF10 STD10NF10-1 N-channel 100V - 0.115 - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V

STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1 Internal schematic diagram Description D(2, TAB

STD10NF10T4 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3 AEC-Q101 qualified 1 Gate charge minimized DPAK Very low intrinsic capacitances Applications Switching appli

STD10NF06L N-CHANNEL 60V - 0.1 - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD10NF06L 60V

STD10NF06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters