All MOSFET. STD10NF10T4 Datasheet

 

STD10NF10T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD10NF10T4
   Marking Code: D10NF10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: DPAK

 STD10NF10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD10NF10T4 Datasheet (PDF)

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 std10nf10-1 std10nf10t4 std10nf10.pdf

STD10NF10T4 STD10NF10T4

STD10NF10STD10NF10-1N-channel 100V - 0.115 - 13A - DPAK - IPAKLow gate charge STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD10NF10 100V

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 std10nf10t4.pdf

STD10NF10T4 STD10NF10T4

STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB

 ..3. Size:905K  cn vbsemi
 std10nf10t4.pdf

STD10NF10T4 STD10NF10T4

STD10NF10T4www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

 7.1. Size:868K  st
 std10nf30.pdf

STD10NF10T4 STD10NF10T4

STD10NF30Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3AEC-Q101 qualified1 Gate charge minimizedDPAK Very low intrinsic capacitancesApplications Switching appli

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 std10nf06l.pdf

STD10NF10T4 STD10NF10T4

STD10NF06LN-CHANNEL 60V - 0.1 - 10A DPAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD10NF06L 60V

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 std10nf06.pdf

STD10NF10T4 STD10NF10T4

STD10NF06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMN13N50C4 | AOD474B

 

 
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