STD10NF10T4 MOSFET Datasheet: N-Ch, 100V, 13A. Full specification with pinout and replacement list

STD10NF10T4 Specs and Replacement

Type Designator: STD10NF10T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: DPAK

STD10NF10T4 substitution

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STD10NF10T4 datasheet

..1. Size:457K st
std10nf10-1 std10nf10t4 std10nf10.pdf pdf_icon

STD10NF10 STD10NF10-1 N-channel 100V - 0.115 - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V ... See More ⇒

..2. Size:849K st
std10nf10t4.pdf pdf_icon

STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1 Internal schematic diagram Description D(2, TAB... See More ⇒

..3. Size:905K cn vbsemi
std10nf10t4.pdf pdf_icon

STD10NF10T4 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒

7.1. Size:868K st
std10nf30.pdf pdf_icon

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3 AEC-Q101 qualified 1 Gate charge minimized DPAK Very low intrinsic capacitances Applications Switching appli... See More ⇒