STD15N65M5 Todos los transistores

 

STD15N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD15N65M5

Código: 15N65M5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 85 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 22 nC

Tiempo de elevación (tr): 8 nS

Conductancia de drenaje-sustrato (Cd): 23 pF

Resistencia drenaje-fuente RDS(on): 0.34 Ohm

Empaquetado / Estuche: DPAK

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STD15N65M5 Datasheet (PDF)

1.1. std15n65m5.pdf Size:1087K _st

STD15N65M5
STD15N65M5

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V < 0.34 Ω 11 A STD15N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

4.1. std15nf10t4.pdf Size:329K _st

STD15N65M5
STD15N65M5

STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET™ II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 Ω 23 A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested DPAK ■ Application oriented characterization Application ■ Switching applications Figure 1. Internal schematic diagram Description This MOSFET series re

4.2. std15nf10.pdf Size:331K _st

STD15N65M5
STD15N65M5

STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET™ II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 Ω 23 A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested DPAK ■ Application oriented characterization Application ■ Switching applications Figure 1. Internal schematic diagram Description This MOSFET series re

 4.3. std15n06-.pdf Size:168K _st

STD15N65M5
STD15N65M5

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPA

4.4. std15n.pdf Size:140K _st

STD15N65M5
STD15N65M5

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK

 4.5. stu15n20 std15n20.pdf Size:148K _samhop

STD15N65M5
STD15N65M5

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

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