STD15N65M5 - Даташиты. Аналоги. Основные параметры

STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packages Features TAB TAB VDS @ RDS(on) max. ID Order code TJmax 3 2 2 1 3 STB15N65M5 1 710 V 0.34 11 A D2PAK DPAK STD15N65M5 Extremely low RDS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V

STD15NF10 N-channel 100 V, 0.060 , 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V

STD15NF10 N-channel 100 V, 0.060 , 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD15NF10T4 FEATURES With To-252(DPAK) package Application oriented characterization Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER