STD15NF10T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD15NF10T4
   Código: D15NF10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 23 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 45 nS
   Conductancia de drenaje-sustrato (Cd): 125 pF
   Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD15NF10T4

STD15NF10T4 Datasheet (PDF)

..1. Size:329K st
std15nf10t4.pdf

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

..2. Size:208K inchange semiconductor
std15nf10t4.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD15NF10T4FEATURESWith To-252(DPAK) packageApplication oriented characterizationExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

5.1. Size:331K st
std15nf10.pdf

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

8.1. Size:506K 1
std15n06 std15n06-1 std15n06t4.pdf

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std15n06l std15n06l-1 std15n06lt4.pdf

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

8.3. Size:868K st
stb15n65m5 std15n65m5.pdf

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

8.4. Size:168K st
std15n06-.pdf

STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V

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std15n65m5.pdf

STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V

8.6. Size:788K st
std15n50m2ag.pdf

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

8.7. Size:140K st
std15n.pdf

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

8.8. Size:148K samhop
stu15n20 std15n20.pdf

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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