STD20NF10T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD20NF10T4
   Código: D20NF10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 85 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 40 nC
   Tiempo de subida (tr): 40 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD20NF10T4

STD20NF10T4 Datasheet (PDF)

..1. Size:328K st
std20nf10t4.pdf

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

5.1. Size:331K st
std20nf10.pdf

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

7.1. Size:342K st
std20nf06t4.pdf

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

7.2. Size:414K st
std20nf06lt4 std20nf06l std20nf06l-1.pdf

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

7.3. Size:345K st
std20nf06.pdf

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

7.4. Size:410K st
std20nf06l std20nf06l-1.pdf

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

7.5. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf

STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V

7.6. Size:1181K umw-ic
std20nf06l.pdf

R STD20NF06LUMW60V N-Channel Enhancement Mode Power MOSFETUMW STD20NF06LGeneral DescriptionThe STD20NF06L uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.FeaturesVDS = 60V,ID =30ARDS(ON),25m(Typ) @ VGS =10VRDS(ON),30m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RD

7.7. Size:286K inchange semiconductor
std20nf20.pdf

isc N-Channel MOSFET Transistor STD20NF20FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

7.8. Size:286K inchange semiconductor
std20nf06l.pdf

isc N-Channel MOSFET Transistor STD20NF06LFEATURESDrain Current : I = 24A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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