STD20NF10T4 Datasheet and Replacement

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V

R STD20NF06LUMW60V N-Channel Enhancement Mode Power MOSFETUMW STD20NF06LGeneral DescriptionThe STD20NF06L uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.FeaturesVDS = 60V,ID =30ARDS(ON),25m(Typ) @ VGS =10VRDS(ON),30m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RD

isc N-Channel MOSFET Transistor STD20NF20FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor STD20NF06LFEATURESDrain Current : I = 24A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen