STD2N80K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD2N80K5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: DPAK

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STD2N80K5 Datasheet (PDF)

..1. Size:1626K st
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STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5N-channel 800 V, 3.5 typ., 2 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD2N80K5 45 WDPAK3 STF2N80K5 20 W2800 V 4.5 2 A1STP2N80K5TAB45 WTO-220FPSTU2N80K5TAB TO-220 worldwide best RDS

7.1. Size:47K st
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STD2NB80-1N - CHANNEL 800V - 4.6 - 1.9A - IPAKPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTD2NB80-1 800V

9.1. Size:407K 1
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STD2N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD2N50 500 V

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STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

9.4. Size:598K st
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STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

9.5. Size:441K st
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STD2NK70ZSTD2NK70Z-1N-channel 700V - 6 - 1.6 A - DPAK/IPAKZener protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTD2NK70Z 700V 7 1.6A 45WSTD2NK70Z-1 700V 7 1.6A 45W3321 Extremely high dv/dt capability1 ESD improved capabilityDPAKIPAK 100% avalanche tested New high voltage benchmark Gate charge minimizedDes

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STD2N62K3, STF2N62K3, STU2N62K3DatasheetN-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2N62K3 DPAKSTF2N62K3 620 V 3.6 2.2 A TO-220FPSTU2N62K3 IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1) Improved

9.7. Size:557K st
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STD2NK90Z-1, STD2NK90ZT4, STP2NK90ZDatasheetN-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packagesFeaturesTAB TAB32VDS RDS(on) max. IDOrder code Package132IPAK DPAK1STD2NK90Z-1 IPAKTAB STD2NK90ZT4 900 V 6.5 2.1 A DPAKSTP2NK90Z TO-220 Extremely high dv/dt capability3TO-220 21 100% avalanche tested Ga

9.8. Size:407K st
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9.9. Size:442K st
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9.10. Size:542K st
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STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

9.11. Size:102K st
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STD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V

9.12. Size:482K st
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9.13. Size:451K st
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9.14. Size:1284K st
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9.16. Size:391K st
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STD2NC45-1STQ1NC45N-CHANNEL 450V - 4.1 - 1.5 A IPAK / TO-92SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTD2NC45-1 450 V

9.17. Size:1136K st
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STD2N105K5, STP2N105K5, STU2N105K5N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTAB3Order codes VDS RDS(on) max ID PTOT1STD2N105K5DPAKSTP2N105K5 1050 V 8 1.5 A 60 WTABSTU2N105K5TAB Industrys lowest RDS(on) x area Industrys best figure of merit (FoM)33221

9.18. Size:354K st
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STD2NB25N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD2NB25 250 V

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9.21. Size:174K st
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STD2N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD2N50 500 V

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STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT32311STB2N62K3TAB45 WIPAKDPAKSTD2N62K33TABSTF2N62K3 620 V

9.23. Size:1117K st
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9.24. Size:447K st
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STD2NC70ZSTD2NC70Z-1N-CHANNEL 700V - 4.1 - 2.3A DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTD2NC70Z 700V

9.25. Size:451K st
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9.26. Size:283K st
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STD2NC60N-CHANNEL 600V - 3.3 - 2A DPAK / IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD2NC60 600V

9.27. Size:256K st
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STD2NC45-1N-channel 450 V, 4.1 , 1.5 A, IPAKSuperMESH Power MOSFETFeatures Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark321ApplicationIPAK Switching applicationsDescriptionThe SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerM

9.28. Size:474K st
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STD2NM60STD2NM60-1N-CHANNEL 600V - 2.8 - 2A DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD2NM60 600V

9.29. Size:98K st
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STD2NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTD2NA50 500 V

9.30. Size:853K cn vbsemi
std2nb60t4.pdf pdf_icon

STD2NB60T4www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS

Otros transistores... STD25NF10LT4 , STD25NF10T4 , STD25NF20 , STD26P3LLH6 , STD28P3LLH6 , STD2955T4G , STD2LN60K3 , STD2N105K5 , RU6888R , STD2N95K5 , STD2NK70Z-1 , STD2NK70ZT4 , STD2NK90ZT4 , STD2NM60T4 , STD30N10F7 , STD30NE06LT4 , STD30NF03L-1 .