STD30N10F7 Todos los transistores

 

STD30N10F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD30N10F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.5 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET STD30N10F7

 

STD30N10F7 Datasheet (PDF)

 ..1. Size:1191K  st
std30n10f7 stf30n10f7.pdf

STD30N10F7
STD30N10F7

STD30N10F7, STF30N10F7N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max ID PTOTSTD30N10F7 32 A 50 W100 V 0.024 TABSTF30N10F7 24 A 25 W31 Ultra low on-resistance3DPAK2 100% avalanche tested1TO-220FPApplications Switching appl

 ..2. Size:763K  st
std30n10f7.pdf

STD30N10F7
STD30N10F7

STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: I

 7.1. Size:146K  samhop
stu30n15 std30n15.pdf

STD30N10F7
STD30N10F7

GreenProductSTU/D30N15aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.22A150V 62 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIES STD SERIESTO-252AA (D-PAK) TO-251 (I-PAK)ABSOLUTE MAXIMUM RATING

 8.1. Size:47K  st
std30ne06.pdf

STD30N10F7
STD30N10F7

STD30NE06N - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06 60 V

 8.2. Size:465K  st
std30nf06l.pdf

STD30N10F7
STD30N10F7

STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V

 8.3. Size:276K  st
std30ne06l.pdf

STD30N10F7
STD30N10F7

STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V

 8.4. Size:324K  st
std30nf06t4.pdf

STD30N10F7
STD30N10F7

STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V

 8.5. Size:461K  st
std30nf06.pdf

STD30N10F7
STD30N10F7

STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V

 8.6. Size:55K  st
std30ne06l-.pdf

STD30N10F7
STD30N10F7

STD30NE06LN - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06L 60 V

 8.7. Size:192K  st
std30ne06lt4.pdf

STD30N10F7
STD30N10F7

STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V

 8.8. Size:342K  st
std30nf06l-1 std30nf06lt4.pdf

STD30N10F7
STD30N10F7

STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V

 8.9. Size:906K  st
std30nf04lt.pdf

STD30N10F7
STD30N10F7

STD30NF04LTN-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET ina DPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTD30NF04LT 40 V

 8.10. Size:327K  st
std30nf03l-1 std30nf03lt4.pdf

STD30N10F7
STD30N10F7

STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V

 8.11. Size:328K  st
std30nf03l std30nf03l-1.pdf

STD30N10F7
STD30N10F7

STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V

 8.12. Size:141K  samhop
stu30n01 std30n01.pdf

STD30N10F7
STD30N10F7

STU30N01GreenProductSTD30N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.30A 30 @ VGS=10V100VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA

 8.13. Size:760K  cn vbsemi
std30nf04lt.pdf

STD30N10F7
STD30N10F7

STD30NF04LTwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET

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