STD30N10F7
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD30N10F7
Marking Code: 30N10F7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 17.5
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
DPAK
STD30N10F7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD30N10F7
Datasheet (PDF)
..1. Size:1191K st
std30n10f7 stf30n10f7.pdf 
STD30N10F7, STF30N10F7N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max ID PTOTSTD30N10F7 32 A 50 W100 V 0.024 TABSTF30N10F7 24 A 25 W31 Ultra low on-resistance3DPAK2 100% avalanche tested1TO-220FPApplications Switching appl
..2. Size:763K st
std30n10f7.pdf
STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: I
7.1. Size:146K samhop
stu30n15 std30n15.pdf
GreenProductSTU/D30N15aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.22A150V 62 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIES STD SERIESTO-252AA (D-PAK) TO-251 (I-PAK)ABSOLUTE MAXIMUM RATING
8.1. Size:47K st
std30ne06.pdf
STD30NE06N - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06 60 V
8.2. Size:465K st
std30nf06l.pdf
STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V
8.3. Size:276K st
std30ne06l.pdf
STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V
8.4. Size:324K st
std30nf06t4.pdf
STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V
8.5. Size:461K st
std30nf06.pdf
STD30NF06N-CHANNEL 60V - 0.020 - 28A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06 60 V
8.6. Size:55K st
std30ne06l-.pdf
STD30NE06LN - CHANNEL 60V - 0.025 - 30A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD30NE06L 60 V
8.7. Size:192K st
std30ne06lt4.pdf
STD30NE06LN - CHANNEL 60V - 0.025 - 30A TO-252STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NE06L 60 V
8.8. Size:342K st
std30nf06l-1 std30nf06lt4.pdf
STD30NF06LN-CHANNEL 60V - 0.022 - 35A DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD30NF06L 60 V
8.9. Size:906K st
std30nf04lt.pdf
STD30NF04LTN-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET ina DPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTD30NF04LT 40 V
8.10. Size:327K st
std30nf03l-1 std30nf03lt4.pdf
STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V
8.11. Size:328K st
std30nf03l std30nf03l-1.pdf
STD30NF03LSTD30NF03L-1N-channel 30V - 0.020 - 30A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD30NF03L-1 30V
8.12. Size:141K samhop
stu30n01 std30n01.pdf
STU30N01GreenProductSTD30N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.30A 30 @ VGS=10V100VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA
8.13. Size:760K cn vbsemi
std30nf04lt.pdf
STD30NF04LTwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET
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